報告書番号

181045

タイトル（和文）

２５０ｍｍ耐霧がいしの交流汚損耐電圧

タイトル（英文）

AC WITHSTAND VOLTAGE OF CONTAMINATED 250MM ANTI-POLLUTION TYPE INSULATOR

概要 （図表や脚注は「報告書全文」に掲載しております）

２５０ｍｍ耐霧がいしの交流汚損耐電圧性を求め，汚損試験法，がいし形状，上下面不平等汚損などの影響や課電暴露フラッシオーバ電圧との関係などを検討した。結果の主要点は次のとおりである。（１）耐霧がいしの定印霧中耐電圧は等価霧中耐電圧より高く，下面深ひだの効果により塩分付着密度の増加とともにその差は大きくなった。（２）定印霧中耐電圧特性は課電暴露試験から得られた自然条件における最低フラッシオーバ電圧特性にほぼ一致した。（３）がいし種類の間の相対的な耐塩強度は人工汚損試験法によって異なった。標準懸垂や長幹がいしとの比較では２５０ｍｍ耐霧がいしの霧中耐電圧が最も優れた特性を示した。（４）下面に比べ，上面の塩分付着密度が少ない不平等汚損を受けたがいしの霧中耐電圧は平等汚損がいしのそれより高くなり，上面の汚損が軽くなるほど耐電圧の差が広がった。

概要 （英文）

THE AC WITHSTAND VOLTAGE TESTS WERE CARRIED OUT ON ARTIFICIALLY CONTAMINATED 250MM ANTI-POLLUTION TYPE INSULATORS. THE EFFECTS OF ARTIFICIAL CONTAMINATION TEST METHODS, TYPES OF INSULATORS AND NON-UNIFORM DISTRIBUTIONS OF CONTAMINATION BETWEEN TOP AND BOTTOM SURFACES ON THE WITHSTAND VOLTAGE AND THE RELATIONSHIP BETWEEN WITHSTAND VOLTAGE CHARACTERISTICS BY ARTIFICIAL TESTS AND BY NATURAL CONTAMINATION TEST WERE INVESTIGATED. THE MAIN POINTS OF THE TEST RESULTS ARE SUMMARIZED AS FOLLOWS: (1)THE WITHSTAND VOLTAGE OF THE CONTAMINATED 250MM ANTI-POLLUTION TYPE INSULATORBY THE FOG METHOD WAS HIGHER THAN THAT BY THE EQUIVALENT FOG METHOD. DEEP RIBS ON THE BOTTOM SURFACE INCREASED THE DIFFERENCE OF THE WITHSTAND VOLTAGES CAUSED BY CONTAMINATION TEST METHODS AS THE SALT DEPOSIT DENSITY INCREASED. (2)THE WITHSTAND VOLTAGE CHARACTERISTICS OF THE CONTAMINATED 250MM ANTI-POLLUTION TYPE INSULATORBY THE FOG METHOD WERE ALMOST EQUIVALENT TO THE MINIMUM FLASHOVER VOLTAGE CHARACTERISTICS UNDER NATURAL CONDITIONS. (3)THE RELATIVE ANTI-POLLUTION STRENGTH BETWEEN INSULATOR TYPES DEPENDED ON THE ARTIFICIAL CONTAMINATION TEST METHODS. THE FOG WITHSTAND VOLTAGE OF THE 250MM ANTI-POLLUTION TYPE INSULATOR WAS THE HIGHEST AMONG THE WITHSTAND VOLTAGE CHARACTERISTICS OF 250MM SUSPENSION INSULATOR, 250MM ANTI-POLLUTION INSULATORAND LONG ROD INSULATOR. (4)NON-UNIFORMLY CONTAMINATED INSULATORS WHOSETOP SURFACE HAD LOWER SALT DEPOSIT DENSITY THAN THE BOTTOM SURFACE SHOWED HIGHER FOG WITHSTAND VOLTAGE THAN THE UNIFORMLY CONTAMINATED INSULATORS AT THE SAME SALT DEPOSIT DENSITY ON THE BOTTOM SURFACE. AS THE CONTAMINATION ON THE TOP SURFACE DECREASED, THE WITHSTAND VOLTAGE BECAME HIGHER.

報告者

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