報告書番号

181003

タイトル（和文）

ＵＨＶ級がいし類の交流霧中耐電圧特性（その３）－ＵＨＶブッシング用がい管の汚損耐電圧特性－

タイトル（英文）

AC WITHSTAND VOLTAGE CHARACTERISTICS OF ARTIFICIALLY CONTAMINATED BUSHING SHELLS FOR UHV SYSTEMS

概要 （図表や脚注は「報告書全文」に掲載しております）

ＵＨＶブッシング用がい管の交流人工汚損試験を実施し，塩分付着密度，有効長および試験法などが耐電圧に及ぼす影響を検討した。結果の主要点は次の通りである。（１）等価霧中５％フラッシオーバ電圧および定印霧中耐電圧は，塩分付着密度の減少とともに高くなったが，塩分付着密度０．０３ｍｇ／平方ｃｍ程度以下で定印霧中耐電圧はほぼ一定の値となった。（２）等価霧中５％フラッシオーバ電圧および定印霧中耐電圧はがい管の有効長とほぼ正比例の関係を示したが，軽汚損時における定印霧中耐電圧は有効長との間に若干非直線性を示した。（３）軽汚損を受けたがい管の注水耐電圧は，有効長が長い場合，霧中耐電圧と同程度の値となった。（４）５４トン懸垂がいしの連結長とがい管の有効長が同じ場合，両者の同汚損度における霧中耐電圧はプラスマイナス１０％の範囲で同じ値となった。

概要 （英文）

THE AC WITHSTAND VOLTAGE TESTS WERE CARRIED OUT ON THE ARTIFICIALLY CONTAMINATED BUSHING SHELLS FOR UHV SYSTEMS AT THE UHV FOG LABORATORY OF CRIEPI. THE EFFECTS OF A SALT DEPOSIT DENSITY,AN EFFECTIVE LENGTH OF THE BUSHING SHELLS AND ARTIFICIAL CONTAMINATIONTEST METHODS ON THE WITHSTAND VOLTAGE WERE INVESTIGATED. THE MAIN POINTS OF THE TEST RESULTS ARE SUMMARIZED AS FOLLOWS:(1)THE 5% FLASHOVER VOLTAGE BY THE EQUIVALENT FOG METHOD AND THE WITHSTAND VOLTAGE BY THE FOGWITHSTAND METHOD INCREASED AS THE SALT DEPOSIT DENSITY DECREASED. IN ALOW CONTAMINATION REGION BELOW ABOUT 0.03MG/SQUARE CM OF SALT DEPOSIT DENSITY,HOWEVER,THE FOG WITHSTAND VOLTAGE BECAME ALMOST CONSTANT. (2)THE 5% FLASHOVER VOLTAGE BY THE EQUIVALENT FOG METHOD AND THE FOG WITHSTAND VOLTAGE INCREASED IN PROPORTION TO THE EFFECTIVE LENGTH OF THE BUSHING SHELLS UP TO 14 METERS. HOWEVER,THE FOG WITHSTAND VOLTAGE IN THE RANGE OF LIGHT CONTAMINATION SHOWED THE NONLINEARITY WITH THE EFFECTIVE LENGTH. (3)THE WITHSTAND VOLTAGE BY THE ARTIFICIAL RAIN TEST WAS ALMOST THE SAME AS THAT BY THE FOG WITHSTAND TEST. (4)THE FOG WITHSTAND VOLTAGES OF THE BUSHING SHELL AND THE 54TON SUSPENSION INSULATOR WITH THE SAMELENGTH AND SALT DEPOSIT DENSITY AGREED WITHIN THE RANGE OF -10 - +10%.

報告者

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